STFI10LN80K5
MOSFET N-CH 800V 8A I2PAKFPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STFI10LN80K5 is an N-channel MDmesh™ K5 series Power MOSFET. This device features a drain-source voltage rating of 800 V and a continuous drain current of 8 A at 25°C (Tc). The Rds On is specified at a maximum of 630 mOhm at 4 A and 10 V. Key parameters include a gate charge (Qg) of 15 nC at 10 V and input capacitance (Ciss) of 427 pF at 100 V. The MOSFET is housed in a TO-281 (I2PAKFP) package, also known as TO-262-3 Full Pack, I2PAK, and is suitable for through-hole mounting. Power dissipation is rated at 20 W (Tc). This component is utilized in power supply and power factor correction applications across various industries.
Additional Information
Series: MDmesh™ K5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Full Pack, I2PAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-281 (I2PAKFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 427 pF @ 100 V |
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