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STFH40N60M2

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STFH40N60M2

MOSFET N-CH 600V 34A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STFH40N60M2 is an N-Channel Power MOSFET from the MDmesh™ M2 series. This component features a 600V drain-source voltage (Vdss) and a continuous drain current of 34A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 88mOhm maximum at 17A and 10V. Key specifications include a gate charge (Qg) of 57 nC maximum at 10V and input capacitance (Ciss) of 2500 pF maximum at 100V. The STFH40N60M2 is housed in a TO-220FP package and has a maximum power dissipation of 40W (Tc). It is suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This device finds application in power factor correction, switch-mode power supplies, and industrial motor control.

Additional Information

Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs88mOhm @ 17A, 10V
FET Feature-
Power Dissipation (Max)40W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 100 V

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