STF9NM50N
MOSFET N-CH 500V 5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF9NM50N is a 500 V N-channel MOSFET from the MDmesh™ series. This through-hole component, packaged in a TO-220FP, offers a continuous drain current of 5A (Tc) with a maximum power dissipation of 25W (Tc). Key electrical specifications include a drain-to-source voltage (Vdss) of 500 V, a maximum on-resistance (Rds On) of 560mOhm at 3.7A and 10V drive voltage, and a gate charge (Qg) of 20 nC at 10V. Input capacitance (Ciss) is rated at 570 pF (Max) at 50 V. The operating temperature range extends to 150°C (TJ). This device is suitable for applications in power supply units and general-purpose power switching.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 560mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 50 V |
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