STF9NK80Z
MOSFET N-CH 800V 7.5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SuperMESH™ STF9NK80Z is an N-channel Power MOSFET designed for high-voltage applications. This component features an 800 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7.5 A at 25°C. With a maximum power dissipation of 35 W (Tc), it is suitable for demanding power conversion tasks. The device offers a low on-resistance (Rds On) of 1.2 Ohm maximum at 3.75 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 84 nC maximum at 10 V and input capacitance (Ciss) of 1900 pF maximum at 25 V. The STF9NK80Z is packaged in a TO-220FP through-hole configuration, facilitating easy integration into printed circuit boards. This MOSFET is utilized in power supply units, lighting, and motor control applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |