STF9N65M2
MOSFET N-CH 650V 5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF9N65M2 is a 650V N-Channel Power MOSFET from the MDmesh™ series. This device features a continuous drain current capability of 5A at 25°C and a maximum power dissipation of 20W (Tc). The STF9N65M2 offers a low on-resistance of 900mOhm maximum at 2.5A and 10V. Key parameters include a gate charge (Qg) of 10 nC at 10V and an input capacitance (Ciss) of 315 pF maximum at 100V. Designed for through-hole mounting, it is supplied in a TO-220FP package. This MOSFET is suitable for applications in power supplies, lighting, and solar inverters. It operates at a maximum junction temperature of 150°C with a ±25V Vgs rating.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 100 V |
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