STF9HN65M2
MOSFET N-CH 650V 5.5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF9HN65M2 is a 650V N-Channel power MOSFET from the MDmesh™ M2 series. This component features a continuous drain current of 5.5A (Tc) and a maximum power dissipation of 20W (Tc). The STF9HN65M2 offers a low on-resistance of 820mOhm at 2.5A and 10V, with a gate charge of 11.5 nC @ 10V and input capacitance of 325 pF @ 100V. Designed for through-hole mounting in a TO-220FP package, it operates at junction temperatures up to 150°C. This device is suitable for applications in power factor correction, switch mode power supplies, and industrial power systems.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 820mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 100 V |
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