STF8NM60N
MOSFET N-CH 600V 7A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF8NM60N is a 600V N-Channel Power MOSFET from the MDmesh™ II series. This device offers a continuous drain current of 7A (Tc) and a maximum power dissipation of 25W (Tc). Key electrical characteristics include a Drain-Source On-Resistance (Rds On) of 650mOhm at 3.5A and 10V, and a gate charge (Qg) of 19 nC at 10V. Input capacitance (Ciss) is specified at 560 pF at 50V. The STF8NM60N features a TO-220FP package with through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 50 V |
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