STF8NK85Z
MOSFET N-CH 850V 6.7A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF8NK85Z is an N-Channel SuperMESH™ Power MOSFET designed for high-voltage applications. This device offers a drain-source voltage (Vds) of 850 V and a continuous drain current (Id) of 6.7 A at 25°C. With a maximum power dissipation of 35 W (Tc), it is suitable for demanding power conversion circuits. The STF8NK85Z features a low on-resistance of 1.4 Ohms at 3.35 A and 10 V gate drive. Key parameters include input capacitance (Ciss) of 1870 pF (max) at 25 V and gate charge (Qg) of 60 nC (max) at 10 V. The component is housed in a TO-220FP package with through-hole mounting and operates over a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supplies, lighting, and industrial applications requiring robust high-voltage switching.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 3.35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 850 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 25 V |
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