STF80N10F7
MOSFET N-CH 100V 40A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF80N10F7 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 40A (Tc) at 25°C. The STF80N10F7 offers a low on-resistance of 10mOhm @ 40A, 10V, achieved with a 10V drive voltage. Key parameters include a Gate Charge (Qg) of 45 nC @ 10 V and an Input Capacitance (Ciss) of 3100 pF @ 50 V. The device supports a maximum Gate-Source Voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4.5V @ 250µA. With a maximum power dissipation of 30W (Tc), it operates across a temperature range of -55°C to 175°C (TJ). The component is housed in a TO-220FP package and is suitable for through-hole mounting. This MOSFET is utilized in industrial and automotive applications requiring efficient power switching.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 50 V |
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