STF7N65M6
MOSFET N-CH 650V 5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STF7N65M6 is an N-Channel Power MOSFET from the MDmesh™ M6 series. This device features a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain current (Id) of 5 A at 25°C. With a maximum power dissipation of 20 W (Tc), it is suitable for demanding applications. The STF7N65M6 offers a low gate charge of 6.9 nC at 10 V and an input capacitance (Ciss) of 220 pF at 100 V. Its on-resistance (Rds On) is a maximum of 990 mOhm at 2.5 A and 10 V. The component is housed in a TO-220FP package and supports through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in power factor correction, switch mode power supplies, and high-efficiency converters.
Additional Information
Series: MDmesh™ M6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 990mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 3.75V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 100 V |
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