STF7N60DM2
MOSFET N-CH 600V 6A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STF7N60DM2 is an N-Channel Power MOSFET from the MDmesh™ DM2 series. This component features a 600V drain-source breakdown voltage and a continuous drain current of 6A at 25°C. The device offers a low on-resistance of 900mOhm maximum at 3A and 10V gate-source voltage. With a maximum power dissipation of 25W (Tc), it is housed in a TO-220FP package suitable for through-hole mounting. The STF7N60DM2 exhibits a typical gate charge of 7.5 nC at 10V and an input capacitance of 324 pF at 100V. This MOSFET is engineered for applications in power factor correction, switch mode power supplies, and general-purpose power switching across various industrial sectors.
Additional Information
Series: MDmesh™ DM2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 324 pF @ 100 V |
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