STF7N52K3
MOSFET N-CH 525V 6A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH3™ STF7N52K3 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source breakdown voltage (Vdss) of 525V and a continuous drain current (Id) of 6A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 850mOhm at 3A and 10V gate drive. With a gate charge (Qg) of 33 nC at 10V and an input capacitance (Ciss) of 870 pF at 100V, this MOSFET is suitable for demanding switching applications. It has a maximum power dissipation of 25W (Tc) and operates at junction temperatures up to 150°C. The STF7N52K3 is housed in a TO-220FP package with a through-hole mounting type. This component finds application in power factor correction, switch mode power supplies, and general purpose high voltage switching.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
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