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STF7N52DK3

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STF7N52DK3

MOSFET N-CH 525V 6A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STF7N52DK3 is an N-Channel Power MOSFET from the SuperFREDmesh3™ series. This device features a drain-source voltage (Vdss) of 525V and a continuous drain current (Id) of 6A at 25°C (Tc). Designed for through-hole mounting in a TO-220FP package, it offers a maximum power dissipation of 25W (Tc) and a low on-resistance (Rds On) of 1.15 Ohm maximum at 3A and 10V gate drive. Key parameters include a gate charge (Qg) of 33 nC at 10V and an input capacitance (Ciss) of 870 pF at 50V. This MOSFET is suitable for applications in power supply units, industrial motor control, and lighting. The operating temperature range is up to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±30V.

Additional Information

Series: SuperFREDmesh3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs1.15Ohm @ 3A, 10V
FET Feature-
Power Dissipation (Max)25W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)525 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 50 V

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