STF6NM60N
MOSFET N-CH 600V 4.6A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF6NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 4.6 A at 25°C. The device offers a maximum on-resistance (Rds On) of 920 mOhm at 2.3 A and 10 V gate drive. With a maximum power dissipation of 20W (Tc), it is housed in a TO-220FP package suitable for through-hole mounting. Key characteristics include a gate charge of 13 nC at 10 V and input capacitance (Ciss) of 420 pF at 50 V. This MOSFET is designed for applications in power supply units, lighting, and industrial automation. Operating temperature range is -55°C to 150°C.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 50 V |
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