STF6N65M2
MOSFET N-CH 650V 4A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STF6N65M2 is a 650V N-Channel Power MOSFET from the MDmesh™ series. This device features a continuous drain current of 4A (Tc) and a maximum power dissipation of 20W (Tc). The STF6N65M2 offers a low on-resistance of 1.35 Ohm at 2A, 10V, with a gate charge of 9.8 nC @ 10V and input capacitance of 226 pF @ 100V. Designed for through-hole mounting in a TO-220FP package, it operates across an extended temperature range of -55°C to 150°C (TJ). This component is suitable for applications in high-voltage power conversion, including power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 226 pF @ 100 V |
Request a Quote
Clients Also Buy
STB43N65M5
MOSFET N-CH 650V 42A D2PAK
STP12NM50FP
MOSFET N-CH 500V 12A TO220FP
STP12NM50
MOSFET N-CH 500V 12A TO220AB
