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STF6N60DM2

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STF6N60DM2

MOSFET N-CH 600V 5A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STF6N60DM2 is an N-Channel Power MOSFET from the MDmesh™ DM2 series, designed for high-efficiency switching applications. This through-hole component, housed in a TO-220FP package, features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 5A at 25°C. The device offers a maximum on-resistance (Rds On) of 1.1 Ohm at 2.5A and 10V gate drive voltage. Key parameters include a gate charge (Qg) of 6.2 nC at 10V and input capacitance (Ciss) of 274 pF at 100V. With a maximum power dissipation of 20W at 25°C (case temperature), this MOSFET is suitable for applications in power supplies, lighting, and industrial motor control. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: MDmesh™ DM2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs1.1Ohm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)20W (Tc)
Vgs(th) (Max) @ Id4.75V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds274 pF @ 100 V

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