STF6N52K3
MOSFET N-CH 525V 5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF6N52K3 is a SuperMESH3™ N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 525 V and a continuous Drain Current (Id) of 5 A at 25°C (Tc). The Rds On is specified at a maximum of 1.2 Ohm at 2.5 A and 10 V gate drive. With a maximum power dissipation of 25 W (Tc) and a gate charge (Qg) of 26 nC at 10 V, this MOSFET is suitable for demanding power conversion tasks. The input capacitance (Ciss) is 670 pF max at 50 V. Packaged in a TO-220FP (TO-220-3 Full Pack) for through-hole mounting, it operates across a temperature range of -55°C to 175°C (TJ). This device finds application in power supplies and industrial automation.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 50 V |
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