Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

STF5NK52ZD

Banner
productimage

STF5NK52ZD

MOSFET N-CH 520V 4.4A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STF5NK52ZD is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage switching applications. This component features a 520V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 4.4A at 25°C (Tc). With a maximum power dissipation of 25W (Tc), it is offered in a TO-220FP package for through-hole mounting. The device exhibits a typical Rds On of 1.5Ohm at 2.2A and 10V Vgs, with a Gate Charge (Qg) of 16.9 nC at 10V. Key parameters include an input capacitance (Ciss) of 529 pF at 25V and a gate-source breakdown voltage of ±30V. This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
FET Feature-
Power Dissipation (Max)25W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)520 V
Gate Charge (Qg) (Max) @ Vgs16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds529 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
STN1NK60Z

MOSFET N-CH 600V 300MA SOT223

product image
STD3NK80ZT4

MOSFET N-CH 800V 2.5A DPAK

product image
STF3NK80Z

MOSFET N-CH 800V 2.5A TO220FP