STF5N60M2
MOSFET N-CH 600V 3.7A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STF5N60M2 is an N-Channel Power MOSFET from the MDmesh™ II Plus series. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 3.7A at 25°C. With a maximum On-Resistance (Rds On) of 1.4 Ohms at 1.85A and 10V Vgs, it offers efficient switching performance. The device is provided in a TO-220FP package, suitable for through-hole mounting. Key parameters include a Gate Charge (Qg) of 4.5 nC at 10V and an input capacitance (Ciss) of 165 pF at 100V. Maximum power dissipation is rated at 20W. This MOSFET is commonly utilized in power supply units, lighting applications, and motor control systems.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.85A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 100 V |
Request a Quote
Clients Also Buy
STB40N60M2
MOSFET N-CH 600V 34A D2PAK
STD9N40M2
MOSFET N-CH 400V 6A DPAK
STD7N60M2
MOSFET N-CH 600V 5A DPAK
