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STF5N52U

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STF5N52U

MOSFET N-CH 525V 4.4A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STF5N52U is an N-Channel Power MOSFET from the UltraFASTmesh™ series. This device features a high drain-source voltage (Vdss) of 525V and a continuous drain current (Id) of 4.4A at 25°C (Tc). The STF5N52U offers a maximum on-resistance (Rds On) of 1.5 Ohm at 2.2A and 10V Vgs. With a maximum power dissipation of 25W (Tc), it is suitable for applications requiring efficient high-voltage switching. Key parameters include a gate charge (Qg) of 16.9 nC at 10V and input capacitance (Ciss) of 529 pF at 25V. The device is housed in a TO-220FP package, designed for through-hole mounting. This component is utilized in power supply units, lighting, and industrial motor control applications. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: UltraFASTmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
FET Feature-
Power Dissipation (Max)25W (Tc)
Vgs(th) (Max) @ Id4.5V @ 50µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)525 V
Gate Charge (Qg) (Max) @ Vgs16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds529 pF @ 25 V

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