STF5N52K3
MOSFET N-CH 525V 4.4A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STF5N52K3 is a SuperMESH3™ N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 525 V. This component features a continuous Drain Current (Id) of 4.4 A (Tc) and a maximum power dissipation of 25 W (Tc). The Rds On is specified at 1.5 Ohm maximum at 2.2 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 17 nC at 10 V and an Input Capacitance (Ciss) of 545 pF at 100 V. The device utilizes MOSFET technology and is housed in a TO-220FP package with through-hole mounting. It is designed for operation across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply design and general-purpose switching.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 100 V |
Request a Quote
Clients Also Buy
STQ2LN60K3-AP
MOSFET N-CH 600V 600MA TO92-3
STD3N62K3
MOSFET N-CH 620V 2.7A DPAK
STP5NK100Z
MOSFET N-CH 1000V 3.5A TO220AB
