STF4N52K3
MOSFET N-CH 525V 2.5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF4N52K3 is a SuperMESH3™ N-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 525V. This component offers a continuous drain current (Id) of 2.5A (Tc) and a maximum power dissipation of 20W (Tc). The Rds On is specified at 2.6 Ohms maximum at 1.25A and 10V gate drive. Key parameters include a gate charge (Qg) of 11 nC maximum at 10V and input capacitance (Ciss) of 334 pF maximum at 100V. The device operates at junction temperatures up to 150°C and is housed in a TO-220FP package, suitable for through-hole mounting. This MOSFET is relevant for applications in power factor correction, switch mode power supplies, and general-purpose power switching.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 100 V |
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