STF3LN62K3
MOSFET N-CH 620V 2.5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH3™ STF3LN62K3 is a 620V N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a continuous drain current capability of 2.5A at 25°C (Tc) and a low on-resistance of 3Ohm maximum at 1.25A, 10V. With a gate charge of 17nC at 10V and input capacitance of 386pF at 50V, it is optimized for fast switching performance. The STF3LN62K3 is housed in a TO-220FP package, offering a maximum power dissipation of 20W (Tc) and operating at junction temperatures up to 150°C. This component is suitable for use in power factor correction, switch mode power supplies, and general-purpose power switching applications across various industrial sectors.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 386 pF @ 50 V |