STF35N65M5
MOSFET N-CH 650V 27A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STF35N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This device features a 650 V drain-source breakdown voltage and a continuous drain current rating of 27 A at 25°C (Tc). With a maximum power dissipation of 40 W (Tc), it is designed for demanding applications. The MOSFET exhibits a low on-resistance (Rds On) of 98 mOhm maximum at 13.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 83 nC maximum at 10 V and an input capacitance (Ciss) of 3750 pF maximum at 100 V. The STF35N65M5 is housed in a TO-220FP package, suitable for through-hole mounting. It operates at junction temperatures up to 150°C and has a maximum gate-source voltage of ±25 V. This component finds application in sectors such as industrial power supplies, renewable energy systems, and electric vehicle charging.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 100 V |
Request a Quote
Clients Also Buy
STD18N55M5
MOSFET N-CH 550V 16A DPAK
STD18N65M5
MOSFET N-CH 650V 15A DPAK
STF45N65M5
MOSFET N-CH 650V 35A TO220FP
