STF34NM60N
MOSFET N-CH 600V 31.5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF34NM60N is a N-Channel Power MOSFET from the MDmesh™ II series. This component features a 600 V breakdown voltage and a continuous drain current capability of 31.5 A at 25°C. The device offers a low on-resistance of 105 mOhm at 14.5 A and 10 V gate drive, with a gate charge of 84 nC at 10 V. Its input capacitance (Ciss) is specified at a maximum of 2722 pF at 100 V. The STF34NM60N is housed in a TO-220FP package, suitable for through-hole mounting, and has a maximum power dissipation of 40 W. It operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2722 pF @ 100 V |
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