STF30NM60N
MOSFET N-CH 600V 25A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF30NM60N is an N-Channel MDmesh™ II series power MOSFET. This device features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 25 A at 25°C (Tc). With a maximum power dissipation of 40 W (Tc) and a low on-resistance of 130 mOhm at 12.5 A and 10 V (Vgs), it offers efficient switching performance. The STF30NM60N has a gate charge (Qg) of 91 nC maximum at 10 V (Vgs) and an input capacitance (Ciss) of 2700 pF maximum at 50 V (Vds). It is housed in a TO-220FP package and is suitable for through-hole mounting. This component is utilized in applications such as power supplies and motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 50 V |
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