STF30NM50N
MOSFET N-CH 500V 27A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STF30NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component offers a 500 V drain-source voltage and a continuous drain current of 27 A at 25°C (Tc). Featuring a maximum power dissipation of 40 W (Tc) and a low on-resistance of 115 mOhm at 13.5 A and 10 V Vgs, it is suitable for applications requiring high efficiency and robust performance. The device is housed in a TO-220FP package and supports through-hole mounting. Key electrical parameters include a gate charge (Qg) of 94 nC at 10 V and input capacitance (Ciss) of 2740 pF at 50 V. This MOSFET is commonly utilized in power factor correction (PFC), switch mode power supplies (SMPS), and industrial motor drives.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2740 pF @ 50 V |
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