STF30N65M5
MOSFET N-CH 650V 22A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF30N65M5 is a 650V N-Channel MOSFET from the MDmesh™ V series. This device features a continuous drain current of 22A at 25°C and a maximum power dissipation of 30W at a case temperature of 25°C. The drain-to-source voltage (Vdss) is 650V, with a gate-source voltage (Vgs) range of ±25V. The STF30N65M5 exhibits a maximum on-resistance (Rds On) of 139mOhm at 11A and 10V. Key parameters include a gate charge (Qg) of 64nC at 10V and input capacitance (Ciss) of 2880pF at 100V. Designed for through-hole mounting, it is housed in a TO-220FP package. This component is suitable for applications in power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 139mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 100 V |
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