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STF28NM60ND

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STF28NM60ND

MOSFET N-CH 600V 23A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STF28NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This device features a continuous drain current (Id) of 23A at 25°C (Tc) and a maximum power dissipation of 35W (Tc). The STF28NM60ND offers a low on-resistance (Rds On) of 150mOhm at 11.5A and 10V, with a gate charge (Qg) of 62.5 nC at 10V. Input capacitance (Ciss) is specified at 2090 pF at 100V. Designed for through-hole mounting, it is housed in a TO-220FP package. This component is suitable for applications in power supplies, industrial motor control, and lighting. It supports a maximum gate-source voltage (Vgs) of ±25V and has a threshold voltage (Vgs(th)) of 5V at 250µA. Operating temperature range extends to 150°C (TJ).

Additional Information

Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs150mOhm @ 11.5A, 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2090 pF @ 100 V

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