STF26NM60ND
MOSFET N-CH 600V 21A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STF26NM60ND is an N-channel Power MOSFET from the FDmesh™ II series, designed for high-efficiency power conversion. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 21A at 25°C, with a maximum power dissipation of 35W (Tc). The device exhibits a low on-resistance (Rds On) of 175mOhm at 10.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 54.6 nC (Max) and Input Capacitance (Ciss) of 1817 pF (Max). The STF26NM60ND is housed in a TO-220FP package with a through-hole mounting type and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 54.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1817 pF @ 100 V |
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