STF26NM60N-H
MOSFET N-CH 600V 20A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF26NM60N-H is a 600V N-Channel Power MOSFET from the MDmesh™ II series. This device offers a continuous drain current of 20A at 25°C (Tc) and a maximum power dissipation of 30W (Tc). It features a low on-resistance of 165mOhm maximum at 10A, 10V, with a typical gate charge of 60nC at 10V. The STF26NM60N-H operates with a drain-source voltage (Vdss) of 600V and a gate-source voltage (Vgs) tolerance of ±25V. Its TO-220FP package with through-hole mounting and a maximum operating junction temperature of 150°C makes it suitable for applications in power factor correction, switch mode power supplies, and general purpose power switching across various industrial and consumer electronics sectors.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
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