STF25NM60N
MOSFET N-CH 600V 21A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF25NM60N, an N-Channel Power MOSFET from the MDmesh™ II series, offers a 600V drain-to-source voltage and a continuous drain current capability of 21A at 25°C. This TO-220FP packaged device features a maximum on-resistance of 160mOhm at 10.5A and 10V Vgs. Key parameters include a gate charge of 84 nC typical and an input capacitance of 2400 pF maximum. Designed for high-efficiency switching applications, it is suitable for power factor correction, switch-mode power supplies, and industrial automation. The operating junction temperature range is up to 150°C, with a maximum power dissipation of 40W at 25°C case temperature.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 50 V |
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