STF25NM50N
MOSFET N-CH 500V 22A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF25NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component offers a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 22 A at 25°C. The device features a low on-resistance of 140 mOhm maximum at 11 A and 10 V, with a typical gate charge (Qg) of 84 nC at 10 V. It is housed in a TO-220FP package for through-hole mounting and provides a maximum power dissipation of 40 W. This MOSFET is suitable for high-voltage switching applications across various industries including power supplies, industrial automation, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2565 pF @ 25 V |
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