STF25N10F7
MOSFET N-CH 100V 19A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STF25N10F7 is an N-Channel STripFET™ VII Power MOSFET designed for demanding power switching applications. This component features a 100V Drain-Source Voltage (Vdss) and a continuous drain current capability of 19A at 25°C (Tc). With a maximum power dissipation of 25W (Tc) and a low on-resistance of 35mOhm at 12.5A and 10V gate drive, it offers excellent efficiency. The STF25N10F7 utilizes DeepGATE™ technology for enhanced performance. Key parameters include a gate charge of 14 nC at 10V and input capacitance of 920 pF at 50V. The device operates over a temperature range of -55°C to 175°C (TJ). Packaged in a TO-220FP (TO-220-3 Full Pack) for through-hole mounting, this MOSFET is suitable for use in industrial, automotive, and consumer electronics power management systems.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 50 V |
Request a Quote
Clients Also Buy
STD100N10F7
MOSFET N CH 100V 80A DPAK
STD25N10F7
MOSFET N-CH 100V 25A DPAK
STL7N10F7
MOSFET N-CH 100V POWERFLAT
