STF23NM60N
MOSFET N-CH 600V 19A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STF23NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This device features a 600 V drain-source breakdown voltage and a continuous drain current of 19 A at 25°C (Tc). With a maximum power dissipation of 35 W (Tc), it is designed for through-hole mounting in a TO-220FP package. The STMicroelectronics STF23NM60N offers a low on-resistance of 180 mOhm at 9.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 60 nC at 10 V and input capacitance (Ciss) of 2050 pF at 50 V. This component is suitable for applications in power factor correction (PFC) and switch-mode power supplies (SMPS). The maximum operating junction temperature is 150°C (TJ) with a ±25 V maximum gate-source voltage.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 50 V |
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