STF19NM65N
MOSFET N-CH 650V 15.5A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF19NM65N is a 650V N-Channel Power MOSFET from the MDmesh™ II series. This device offers a continuous drain current of 15.5A (Tc) and a maximum power dissipation of 35W (Tc). The Rds(On) is specified at 270mOhm at 7.75A and 10V gate drive. Key parameters include a gate charge (Qg) of 55 nC at 10V and input capacitance (Ciss) of 1900 pF at 50V. The MOSFET supports a Vgs(th) of up to 4V at 250µA and a maximum Vgs of ±25V. Packaged in a TO-220FP, it is suitable for through-hole mounting and operates at junction temperatures up to 150°C. This component finds application in power factor correction, switch-mode power supplies, and industrial power systems.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 7.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 50 V |
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