STF18NM60ND
MOSFET N-CH 600V 13A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STF18NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series, available in a TO-220FP package. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C. It offers a maximum on-state resistance (Rds On) of 290mOhm at 6.5A and 10V gate-source voltage. The device has a maximum power dissipation of 30W (Tc) and a junction temperature rating of 150°C. Key parameters include a gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 1030 pF at 50V. This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and general purpose power switching.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 50 V |
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