STF18N65M5
MOSFET N-CH 650V 15A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF18N65M5 is a 650V N-Channel Power MOSFET from the MDmesh™ V series. This component features a continuous drain current of 15A at 25°C with a maximum power dissipation of 25W. The Rds On is specified at 220mOhm maximum at 7.5A and 10V gate-source voltage. Designed for through-hole mounting, it is supplied in a TO-220FP package. Key parameters include a gate charge of 31 nC and input capacitance of 1240 pF. This device is suitable for applications in power factor correction, switched-mode power supplies, and solar inverters. The maximum junction temperature is 150°C, with a gate-source voltage tolerance of ±25V.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 100 V |
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