STF18N55M5
MOSFET N-CH 550V 16A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF18N55M5 is a high-performance N-Channel Power MOSFET from the MDmesh™ V series. This component offers a drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 16A at 25°C, with a maximum power dissipation of 25W (Tc). Featuring a low on-resistance (Rds On) of 192mOhm at 8A and 10V, and a gate charge (Qg) of 31nC at 10V, it is designed for efficient switching applications. The STF18N55M5 is housed in a TO-220FP package, suitable for through-hole mounting. Its robust construction and advanced MOSFET technology make it ideal for use in power supply units, industrial automation, and renewable energy systems. The operating temperature range is up to 150°C (TJ).
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 192mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 100 V |
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