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STF17N62K3

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STF17N62K3

MOSFET N-CH 620V 15.5A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STF17N62K3 is an N-Channel Power MOSFET from the SuperMESH3™ series. This component features a Drain-Source Voltage (Vdss) of 620V and a continuous Drain Current (Id) of 15.5A at 25°C case temperature. The device offers a maximum On-Resistance (Rds On) of 340mOhm at 7.5A and 10V gate drive. With a maximum power dissipation of 40W at 25°C case temperature and an operating junction temperature of 150°C, this MOSFET is suitable for demanding applications. Key electrical parameters include a gate charge (Qg) of 105 nC at 10V and an input capacitance (Ciss) of 3100 pF at 50V. The STF17N62K3 is presented in a TO-220FP package, designed for through-hole mounting. This component is widely utilized in power supply units, lighting, and industrial motor control applications.

Additional Information

Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15.5A (Tc)
Rds On (Max) @ Id, Vgs340mOhm @ 7.5A, 10V
FET Feature-
Power Dissipation (Max)40W (Tc)
Vgs(th) (Max) @ Id4.5V @ 100µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)620 V
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 50 V

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