STF16NM50N
MOSFET N-CH 500V 15A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF16NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 15 A at 25°C. The device offers a low on-resistance (Rds On) of 260 mOhm maximum at 7.5 A and 10 V gate drive. With a maximum power dissipation of 30 W at 25°C, it is housed in a TO-220FP package suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 38 nC at 10 V and input capacitance (Ciss) of 1200 pF at 50 V. This MOSFET is designed for applications in power supplies, lighting, and industrial motor control. The operating junction temperature range is up to 150°C, and the maximum gate-source voltage is ±25 V.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 50 V |
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