STF16NK60Z
MOSFET N-CH 600V 14A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF16NK60Z SuperMESH™ N-Channel Power MOSFET offers a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 14A at 25°C. This device features a maximum on-resistance (Rds On) of 420mOhm at 7A and 10V gate-source voltage (Vgs). With a typical input capacitance (Ciss) of 2650pF at 25V and gate charge (Qg) of 86nC at 10V, it is suitable for applications requiring efficient switching. The MOSFET is housed in a thermally efficient TO-220FP package, supporting a maximum power dissipation of 40W. Key parameters include a gate-source voltage range of ±30V and a threshold voltage (Vgs(th)) of 4.5V at 50µA. This component finds utility in power supply units, lighting, and industrial applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650 pF @ 25 V |
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