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STF15NM60ND

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STF15NM60ND

MOSFET N-CH 600V 14A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STF15NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 14A at 25°C. The Rds(On) is specified at a maximum of 299mOhm at 7A and 10V gate drive. Key parameters include a gate charge (Qg) of 40 nC maximum at 10V and input capacitance (Ciss) of 1250 pF maximum at 50V. The device is packaged in a TO-220FP (TO-220-3 Full Pack) through-hole mounting configuration and can operate between -55°C and 150°C. Power dissipation (Pd) is rated at 30W at 25°C (Tc). This component is suitable for high-voltage switching applications across various industries including power supply, industrial automation, and lighting.

Additional Information

Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs299mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 50 V

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