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STF150N10F7

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STF150N10F7

MOSFET N-CH 100V 65A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STF150N10F7 is an N-Channel Power MOSFET from the DeepGATE™ and STripFET™ VII series, featuring a 100V drain-source voltage. This component offers a continuous drain current of 65A at 25°C (Tc) and a maximum power dissipation of 35W (Tc). It exhibits a low on-resistance of 4.2mOhm at 55A and 10V gate drive. The STF150N10F7 has a gate charge (Qg) of 117 nC maximum at 10V and input capacitance (Ciss) of 8115 pF maximum at 50V. Designed for through-hole mounting, it is supplied in a TO-220FP package. This MOSFET is suitable for applications in industrial power supplies, automotive systems, and power management. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Rds On (Max) @ Id, Vgs4.2mOhm @ 55A, 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8115 pF @ 50 V

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