Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

STF140N8F7

Banner
productimage

STF140N8F7

MOSFET N-CH 80V 64A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STF140N8F7 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This component features a Drain-Source Voltage (Vds) of 80 V and a continuous Drain Current (Id) of 64 A at 25°C (Tc). The device exhibits a low On-Resistance (Rds On) of 4.3 mOhm at 32 A and 10 V, with a maximum power dissipation of 35 W (Tc). Key parameters include a Gate Charge (Qg) of 96 nC at 10 V and Input Capacitance (Ciss) of 6340 pF at 40 V. The STF140N8F7 is housed in a TO-220FP package suitable for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in applications such as automotive, industrial power supplies, and motor control.

Additional Information

Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Rds On (Max) @ Id, Vgs4.3mOhm @ 32A, 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6340 pF @ 40 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
STD100N10F7

MOSFET N CH 100V 80A DPAK

product image
STD25N10F7

MOSFET N-CH 100V 25A DPAK

product image
STL7N10F7

MOSFET N-CH 100V POWERFLAT