STF13NM60N-H
MOSFET N-CH 600V 11A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STF13NM60N-H is a 600 V N-Channel Power MOSFET from the MDmesh™ II series. This component offers a continuous drain current of 11 A at 25°C (Tc) and a maximum power dissipation of 25 W (Tc). Key electrical characteristics include a drain-to-source breakdown voltage (Vdss) of 600 V, a maximum on-resistance (Rds On) of 360 mOhm at 5.5 A and 10 V gate drive, and a gate charge (Qg) of 30 nC at 10 V. Input capacitance (Ciss) is rated at a maximum of 790 pF at 50 V. The device supports a gate-source voltage (Vgs) range of ±25 V and has a threshold voltage (Vgs(th)) of 4 V at 250 µA. Designed for through-hole mounting, it is supplied in a TO-220FP package. This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and general purpose power switching.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
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