STF13NM50N
MOSFET N-CH 500V 12A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF13NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 320mOhm at 6A and 10V Vgs. With a gate charge (Qg) of 30 nC at 10V, it is designed for efficient switching applications. The STF13NM50N is housed in a TO-220FP package, suitable for through-hole mounting, and has a maximum power dissipation of 25W (Tc). This component is utilized in power supply units, lighting, and industrial applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 50 V |
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