STF12PF06
MOSFET P-CH 60V 8A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ II P-Channel MOSFET, part number STF12PF06, offers a 60V drain-source voltage with a continuous drain current of 8A at 25°C (Tc). This device features a low on-resistance of 200mOhm maximum at 10A, 10V, and a maximum gate charge of 21nC at 10V. With a maximum power dissipation of 225W at 25°C (Tc), it is suitable for high-power switching applications. The input capacitance (Ciss) is 850pF maximum at 25V, and it operates within a temperature range of -55°C to 175°C (TJ). The STF12PF06 is housed in a TO-220FP package, facilitating through-hole mounting. This component finds application in power management, automotive, and industrial sectors.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 225W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 25 V |
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