STF12NM60N
MOSFET N-CH 600V 10A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF12NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This device offers a 600 V drain-source voltage and a continuous drain current capability of 10 A at 25°C (Tc). With a maximum power dissipation of 25 W (Tc), it is packaged in a TO-220FP through-hole configuration. Key parameters include a low on-resistance of 410 mOhm at 5 A, 10 V, and a gate charge (Qg) of 30.5 nC at 10 V. Input capacitance (Ciss) is rated at 960 pF at 50 V. This component is suitable for applications in power supplies, industrial automation, and lighting. It operates over an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 410mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 50 V |
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