STF12NM50ND
MOSFET N-CH 500V 11A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF12NM50ND is an N-Channel Power MOSFET from the FDmesh™ II series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 11 A at 25°C (Tc). The Rds On is specified at a maximum of 380 mOhm at 5.5 A and 10 V. With a gate charge of 30 nC (Typ) at 10 V and input capacitance of 850 pF (Max) at 50 V, this device is designed for efficient switching. The STF12NM50ND offers a maximum power dissipation of 25 W (Tc) and operates within an ambient temperature range of 150°C (TJ). It is housed in a TO-220FP package suitable for through-hole mounting. This MOSFET is commonly utilized in power supply, lighting, and industrial applications.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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